Assessment of Different Epitaxial Transfer Techniques for High Frequency III-V Devices

Examensarbete för masterexamen

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12380/123465
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Type: Examensarbete för masterexamen
Master Thesis
Title: Assessment of Different Epitaxial Transfer Techniques for High Frequency III-V Devices
Authors: Tavakoli Dastjerdi, M. Hadi
Abstract: The main aim of this work is to transfer the epitaxially grown, indium phosphide based material structure of heterostructure barrier varactor onto silicon substrate. However, these techniques can be also employed for other high frequency and optoelectronics devices such as laser diodes -hybird lasers-, transistors, photodetectors and photonics interconnects. Different wafer bonding techniques were explored and compared. Test diodes were fabricated on the bonded samples and electrical measurements (I-V and CV) were compared to the results with the reference samples on the original indium phosphide substrate. These measurements verified the quality of epitaxial transfer. Also in order to adapt the remaining processing steps to the initial wafer bonding, a study of ohmic contacts was performed to measure the specific contact resistances for alloyed and non-alloyed ohmic contacts.
Keywords: Elektroteknik och elektronik;Electrical Engineering, Electronic Engineering, Information Engineering
Issue Date: 2010
Publisher: Chalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap
Chalmers University of Technology / Department of Microtechnology and Nanoscience
URI: https://hdl.handle.net/20.500.12380/123465
Collection:Examensarbeten för masterexamen // Master Theses



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