Transient Simulation of GaN HEMTs

Examensarbete för masterexamen

Please use this identifier to cite or link to this item:
Download file(s):
File Description SizeFormat 
179391.pdfFulltext1.66 MBAdobe PDFView/Open
Type: Examensarbete för masterexamen
Master Thesis
Title: Transient Simulation of GaN HEMTs
Authors: Shrestha, Shreetu
Abstract: Subthreshold drain leakage can be suppressed in GaN HEMTs by intentionally doping the GaN buffer with deep acceptor dopants such as C and Fe or by using a double heterostructure. In this thesis, both concepts, doping and using double heterostructure were investigated using numerical device simulation. The main focus was on the study of transient electrical behaviour and the understanding of trapping behaviour of deep acceptor dopants which causes current collapse. It was found that current collapse is dependent on dopant concentration and is worse with Fe doping than with C doping. These results were explained by considering the potential barrier formed in the GaN buffer due to electron trapping. Transistors with an undoped GaN channel layer on top of a doped GaN buffer layer had a small current collapse but much a higher drain current.
Keywords: Informations- och kommunikationsteknik;Elektronik;Information & Communication Technology;Electronics
Issue Date: 2013
Publisher: Chalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap
Chalmers University of Technology / Department of Microtechnology and Nanoscience
Collection:Examensarbeten för masterexamen // Master Theses

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.