W-Band Power Amplifier Design

Examensarbete för masterexamen

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12380/193221
Download file(s):
File Description SizeFormat 
193221.pdfFulltext6.69 MBAdobe PDFView/Open
Type: Examensarbete för masterexamen
Master Thesis
Title: W-Band Power Amplifier Design
Authors: Wei, Li
Abstract: This thesis presents two W-band power amplifiers (PA) in different processes: one is Teledyne 250 nm indium phosphide (InP) double-hetero-junction bipolar transistor (DHBT) process, and the other is United Monolithic Semiconductors (UMS) 0.1 µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. Different power combining topologies are investigated in these two designs. The bandwidth of the interstage matching network is improved by a three-section quarter-wave transformer. In the UMS 0.1 um GaAs pHEMT process, a three-stage PA is designed. Four 40 µm gate-width transistors, each with six fingers, are paralleled by a planar spatial power combiner at the output stage to improve the output power of the PA. The maximum gain of the PA is 14 dB. The 1 dB gain compression point (P1dB) is 21.2 dBm with 14.5% peak power added efficiency (PAE). In the Teledyne 250 nm InP DHBT process, a two-stage power amplifier is implemented. Sixteen four-finger transistors of 10 µm emitter-length are paralleled at both input and output stages to improve the P1dB. The gain of the PA is 12 dB. The P1dB is 23.8 dBm with 11.5% peak PAE. The two circuits are designed in Agilent Advanced Design System (ADS) with transistor and capacitor models offered by the foundries. Transmission line networks for impedance matching, power combining and power splitting are simulated in Momentum, a 2.5-D electromagnetic (EM) software.
Keywords: Informations- och kommunikationsteknik;Nanovetenskap och nanoteknik;Elektroteknik och elektronik;Information & Communication Technology;Nanoscience & Nanotechnology;Electrical Engineering, Electronic Engineering, Information Engineering
Issue Date: 2014
Publisher: Chalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap
Chalmers University of Technology / Department of Microtechnology and Nanoscience
URI: https://hdl.handle.net/20.500.12380/193221
Collection:Examensarbeten för masterexamen // Master Theses

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.