Optimisation of plasma enhanced chemical vapour deposition for silicon nitride photonics using optimal design of experiments
Publicerad
Författare
Typ
Examensarbete för masterexamen
Master's Thesis
Master's Thesis
Program
Modellbyggare
Tidskriftstitel
ISSN
Volymtitel
Utgivare
Sammanfattning
There have been many advances in silicon nitride based integrated photonics, enabling
a variety of interesting applications. The deposition of high quality and low
loss silicon nitride (SiN) during the fabrication of waveguides is essential for creating
useful devices. Low temperature alternatives to low pressure chemical vapour deposition
(LPCVD) such as plasma enhanced chemical vapour deposition (PECVD)
are required to enable back-end-of-line (BEOL) integration.
The difficulty with optimising PECVD deposition of silicon nitride is that it includes
many process parameters that affect the deposition and resulting properties of the
film. Thus, optimisation of the PECVD recipe requires a strategic approach to the
experimental design.
In this work, a technique called optimal design of experiments (DoE) is used to
obtain an overview of the PECVD factor’s influence on silicon nitride properties,
and to predict the optimal PECVD recipe. With the help of the statistical software
JMP the optimal DoE for PECVD deposition of SiN created, significant factors
and correlations identified, and optimal PECVD factor combinations predicted. Ellipsometry
measurements provide data regarding the responses of interest, namely
thickness uniformity, refractive index, and extinction coefficient of the SiN film.
It is found that the refractive index is correlated with the ammonia gas flow rate and
the extinction coefficient. Most PECVD factors appear to be relevant, in particular
the ammonia gas flow rate for the refractive index and the extinction coefficient,
and the frequency mode for the thickness uniformity. In addition, two-factor interaction
effects are present in the PECVD process and affect the relationship between
process parameters and responses. Furthermore, in terms of stoichiometry, silicon
nitride films with a refractive index close to two are found to be silicon rich. The
testing of predicted recipes shows that the three responses, i.e. refractive index,
extinction coefficient and thickness uniformity, cannot be optimised simultaneously
to the desired outcome. However, when considering a stoichiometric Si/N ratio instead
of the refractive index, predicted recipes result in improved and equally good
responses compared to default PECVD and LPCVD recipes, respectively.
This approach of optimal DoE shows promising potential and could be interesting
to explore further, especially regarding the optimisation of other relevant fabrication
steps affecting the propagation losses in waveguides.
Beskrivning
Ämne/nyckelord
Silicon Nitride, PECVD, Photonic Integrated Circuits, Optimal Design of Experiments