Room Temperature Charge-Spin Interconversion in a Topological Insulator and Graphene Heterostructure

dc.contributor.authorSjöström, Lars
dc.contributor.departmentChalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap (MC2)sv
dc.contributor.examinerPrasad Dash, Saroj
dc.contributor.supervisorPrasad Dash, Saroj
dc.contributor.supervisorMd Hoque, Anamul
dc.date.accessioned2022-03-17T08:20:50Z
dc.date.available2022-03-17T08:20:50Z
dc.date.issued2022sv
dc.date.submitted2020
dc.description.abstractThe main goal of spintronics is to utilise the spin degree of freedom beyond conventional charge-based technologies and make faster and less energy-consuming nonvolatile information technology. To realise this, efficient generation, transport and detection of polarised spin are necessary. Topological insulators are emerging materials for spin generation and detection in all-electrical spintronics applications, thanks to their strong spin-orbit coupling and the non-trivial spin-momentum locking of their unique topological surface states. Due to the efficient charge-to-spin conversion process, applying a bias current to induce a net carrier momentum should spontaneously generate a net spin polarisation in such a system. However, while charge-spin interconversion in topological insulators has previously been reported, reliable non-local measurements have so far been limited to cryogenic temperatures. In this master’s thesis, charge-to-spin and spin-to-charge conversion in the topological insulator Bi1.5Sb0.5Te1.7Se1.3 are detected in a non-local measurement method at room temperature, using a van der Waals heterostructure with a graphene spin valve device. These heterostructures make it possible to combine the spin polarisation of the topological insulator with the excellent spin transport properties of graphene. The observation of both spin switch and Hanle spin precession signals in the non-local geometry and detailed bias- and gate-dependent measurements prove the robustness of the charge-spin interconversion effects in topological insulators at room temperature. These findings demonstrate the possibility of using topological insulators to make all-electrical room-temperature spintronics devices.sv
dc.identifier.coursecodeMCCX04sv
dc.identifier.urihttps://hdl.handle.net/20.500.12380/304539
dc.language.isoengsv
dc.setspec.uppsokPhysicsChemistryMaths
dc.subjectspintronics, topological insulator, Bi1.5Sb0.5Te1.7Se1.3, charge-spin interconversion, room temperature, van der Waals heterostructure, graphene, spin valve, spin switch, Hanle spin precessionsv
dc.titleRoom Temperature Charge-Spin Interconversion in a Topological Insulator and Graphene Heterostructuresv
dc.type.degreeExamensarbete för masterexamensv
dc.type.uppsokH
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