Assessment of Different Epitaxial Transfer Techniques for High Frequency III-V Devices

dc.contributor.authorTavakoli Dastjerdi, M. Hadi
dc.contributor.departmentChalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskapsv
dc.contributor.departmentChalmers University of Technology / Department of Microtechnology and Nanoscienceen
dc.date.accessioned2019-07-03T12:22:30Z
dc.date.available2019-07-03T12:22:30Z
dc.date.issued2010
dc.description.abstractThe main aim of this work is to transfer the epitaxially grown, indium phosphide based material structure of heterostructure barrier varactor onto silicon substrate. However, these techniques can be also employed for other high frequency and optoelectronics devices such as laser diodes -hybird lasers-, transistors, photodetectors and photonics interconnects. Different wafer bonding techniques were explored and compared. Test diodes were fabricated on the bonded samples and electrical measurements (I-V and CV) were compared to the results with the reference samples on the original indium phosphide substrate. These measurements verified the quality of epitaxial transfer. Also in order to adapt the remaining processing steps to the initial wafer bonding, a study of ohmic contacts was performed to measure the specific contact resistances for alloyed and non-alloyed ohmic contacts.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/123465
dc.language.isoeng
dc.setspec.uppsokPhysicsChemistryMaths
dc.subjectElektroteknik och elektronik
dc.subjectElectrical Engineering, Electronic Engineering, Information Engineering
dc.titleAssessment of Different Epitaxial Transfer Techniques for High Frequency III-V Devices
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
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