Electrical and Optoelectronic Properties of Two-Dimensional Lateral Heterostructure Semiconductors

Visa enkel post
dc.contributor.authorKrishna Kumar, Baskar
dc.contributor.departmentChalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap (MC2)sv
dc.contributor.departmentChalmers University of Technology / Department of Microtechnology and Nanoscience (MC2)en
dc.contributor.examinerPrasad Dash, Saroj
dc.contributor.supervisorPrasad Dash, Saroj
dc.contributor.supervisorMd Hoque, Anamul
dc.date.accessioned2024-07-01T06:38:33Z
dc.date.available2024-07-01T06:38:33Z
dc.date.issued2024
dc.date.submitted
dc.description.abstractTwo-Dimensional (2D) semiconductors are promising materials for atomically thin electronics and optoelectronics. Specifically, p-n junctions and their gate voltagecontrolled effects in the lateral heterostructures of such 2D semiconductors offer several advantages because of their atomically thin in-plane superlattices. 2D p-n junctions have great potential for application in low-power, high-performance electro-optical devices, such as tunnel transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although vertical heterojunctions are promising for electro-optical devices, the use of mechanical exfoliation process to obtain the vertical heterostructure is unsuitable for wafer-scale fabrication. The in-situ growth of high-quality lateral heterostructures with multiple junctions has just started to be explored. In this master’s thesis, we fabricated field-effect transistors (FETs) based on MoS2- WS2 lateral heterostructures and performed their electrical and optoelectronic characterization. The lateral heterostructures grown using the water-assisted one-pot chemical vapour deposition (CVD) are used to fabricate the back-gated FETs on Si-SiO2 substrates with Ti/Au contacts. We characterized the individual MoS2 and WS2 channels and their heterojunctions. The junctions show diodic behaviour, which could be understood by the formation of n-n+ junction. The transistor parameters are extracted for MoS2, WS2 and MoS2-WS2 heterojunction. Furthermore, we observed a persistent photoconductivity (PPC) effect with a time constant of 10 hrs at the heterojunction. The PPC effect is being explored for applications such as optoelectronic synapses, optical memory, artificial vision etc.
dc.identifier.coursecodeMCCX04
dc.identifier.urihttp://hdl.handle.net/20.500.12380/308142
dc.language.isoeng
dc.setspec.uppsokPhysicsChemistryMaths
dc.subjectTwo-dimensional semiconductors MoS2-WS2 lateral heterostructure, backgated field effect transistors, persistent photoconductivity effect
dc.titleElectrical and Optoelectronic Properties of Two-Dimensional Lateral Heterostructure Semiconductors
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster's Thesisen
dc.type.uppsokH
local.programmeNanotechnology (MPNAT), MSc
Ladda ner
Original bundle
Visar 1 - 1 av 1
Bild (thumbnail)
Namn:
Electrical and Optoelectronic Propertie...ral Heterostructure Semiconductors.pdf
Storlek:
6.09 MB
Format:
Adobe Portable Document Format
Beskrivning:
Ladda ner
License bundle
Visar 1 - 1 av 1
Bild (thumbnail)
Namn:
license.txt
Storlek:
2.35 KB
Format:
Item-specific license agreed upon to submission
Beskrivning:
Ladda ner
Samling
Examensarbeten för masterexamen