HBV diodes for THz applications

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dc.contributor.authorHanning, Johanna
dc.contributor.departmentChalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskapsv
dc.contributor.departmentChalmers University of Technology / Department of Microtechnology and Nanoscienceen
dc.date.accessioned2019-07-03T12:32:35Z
dc.date.available2019-07-03T12:32:35Z
dc.date.issued2011
dc.description.abstractIn this thesis a HBV tripler for an output frequency of 630 GHz is developed. The designed HBV is based on the InGaAs/InAlAs/AlAs epitaxially grown on InP material system and will be realised using a MMIC microstrip circuit inside a waveguide block. The doping and layer structure impact on the cut-off frequency is evaluated as well as the effects of self-heating when choosing an appropriate structure. The circuit design in the complex topology is carried out through full electro-magnetic field FEM simulations in HFSS complemented by harmonic balance simulation and optimisation in ADS. The finished multiplier simulations indicate an output power above 1 mW for an input power of 40 mW, and a relative halfpower bandwidth of 9 % at 630 GHz. Limiting factors are self heating, limited available input power, and fabrication tolerances for mesa size and substrate dimensions.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/138055
dc.language.isoeng
dc.setspec.uppsokPhysicsChemistryMaths
dc.subjectInformations- och kommunikationsteknik
dc.subjectElektronik
dc.subjectInformation & Communication Technology
dc.subjectElectronics
dc.titleHBV diodes for THz applications
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
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