Transfer of wafer scale single crystalline graphene

Abstract

Discoveries and studies on the properties of two-dimensional (2D) materials have attracted significant attention. Among them, graphene has emerged as one of the most promising materials, gaining traction in the fields of electronics, sensing and energy storage. Epitaxial graphene, grown by high-temperature thermal decomposition of silicon carbide (SiC), is a promising 2D material for high-end electronics, offering highly reproducible and homogeneous wafer-scale single-crystal graphene. In this work, graphene was successfully delaminated from such a 4-inch SiC substrate and transferred on to a 4-inch SiO2/Si wafer. This was achieved by optimizing transfer of graphene from 7 mm x 7 mm SiC chips. Studies on the surface and transport properties of these transferred graphene samples indicate that crystalline quality was preserved during the transfer process.