HBV diodes for THz applications

Examensarbete för masterexamen

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12380/138055
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Type: Examensarbete för masterexamen
Master Thesis
Title: HBV diodes for THz applications
Authors: Hanning, Johanna
Abstract: In this thesis a HBV tripler for an output frequency of 630 GHz is developed. The designed HBV is based on the InGaAs/InAlAs/AlAs epitaxially grown on InP material system and will be realised using a MMIC microstrip circuit inside a waveguide block. The doping and layer structure impact on the cut-off frequency is evaluated as well as the effects of self-heating when choosing an appropriate structure. The circuit design in the complex topology is carried out through full electro-magnetic field FEM simulations in HFSS complemented by harmonic balance simulation and optimisation in ADS. The finished multiplier simulations indicate an output power above 1 mW for an input power of 40 mW, and a relative halfpower bandwidth of 9 % at 630 GHz. Limiting factors are self heating, limited available input power, and fabrication tolerances for mesa size and substrate dimensions.
Keywords: Informations- och kommunikationsteknik;Elektronik;Information & Communication Technology;Electronics
Issue Date: 2011
Publisher: Chalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap
Chalmers University of Technology / Department of Microtechnology and Nanoscience
URI: https://hdl.handle.net/20.500.12380/138055
Collection:Examensarbeten för masterexamen // Master Theses

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