Design of drive stage of a Mosfet SiC converter

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dc.contributor.authorGuinard, Orianne
dc.contributor.departmentChalmers tekniska högskola / Institutionen för energi och miljösv
dc.contributor.departmentChalmers University of Technology / Department of Energy and Environmenten
dc.date.accessioned2019-07-03T13:35:31Z
dc.date.available2019-07-03T13:35:31Z
dc.date.issued2014
dc.description.abstractThis thesis is about studying the gate driving of a Mosfet. One step was to build a new circuit board for this investigation using the software Target. First experiments were made that aim to test the driving circuit using an R,C load instead of a Mosfet. When comparing with the simulation, it appears that the gate driver operates as quick and normal as expected when it is used with an R,C load unless R and C are very small (smaller than what it would be using a Mosfet). However, when it is connected to a Mosfet and an R,L load, it doesn't react as fast as expected with the increasing drain-source voltage. Finally, the last part but not the least of this project consists of investigating the switching losses in a Mosfet and an SiC Mosfet. The result are not conclusive so far since the current measurement is biased.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/211346
dc.language.isoeng
dc.setspec.uppsokLifeEarthScience
dc.subjectEnergi
dc.subjectElkraftteknik
dc.subjectEnergy
dc.subjectElectric power engineering
dc.titleDesign of drive stage of a Mosfet SiC converter
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
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