Mixed-mode Circuit and Device Simulations of IGBT with Gate Unit Using Synopsys Sentaurus Device
dc.contributor.author | Zhou, Lei | |
dc.contributor.department | Chalmers tekniska högskola / Institutionen för energi och miljö | sv |
dc.contributor.department | Chalmers University of Technology / Department of Energy and Environment | en |
dc.date.accessioned | 2019-07-03T12:17:06Z | |
dc.date.available | 2019-07-03T12:17:06Z | |
dc.date.issued | 2009 | |
dc.description.abstract | The use of simulation tools is of great value in the process of developing new power electronics devices and new converter topologies. The development time of power electronics and converter topologies can be shortened by the use of simulation tools. Sentaurus Device combines a good numerical model of power electronics devices and complex external circuits. It’s capable to simulate the IGBT switching behaviours applying different gate unit settings in HVDC Light™. The numerical model of the IGBT is studied in the thesis. The results of the IGBT fine-tuning are carried out. Implementing the IGBT model with its gate unit circuit using Sentaurus Device, the impact of various gate drive settings on the IGBT switching losses is demonstrated. | |
dc.identifier.uri | https://hdl.handle.net/20.500.12380/105121 | |
dc.language.iso | eng | |
dc.setspec.uppsok | LifeEarthScience | |
dc.subject | Elkraftteknik | |
dc.subject | Electric power engineering | |
dc.title | Mixed-mode Circuit and Device Simulations of IGBT with Gate Unit Using Synopsys Sentaurus Device | |
dc.type.degree | Examensarbete för masterexamen | sv |
dc.type.degree | Master Thesis | en |
dc.type.uppsok | H |