Methodology for measurements of electrical conductivity of doped silicon carbide

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dc.contributor.authorFrisk, Nils-Bertil
dc.contributor.authorNilsson, Douglas Jutsell
dc.contributor.departmentChalmers tekniska högskola / Institutionen för material- och tillverkningstekniksv
dc.contributor.departmentChalmers University of Technology / Department of Materials and Manufacturing Technologyen
dc.date.accessioned2019-07-03T13:34:38Z
dc.date.available2019-07-03T13:34:38Z
dc.date.issued2014
dc.description.abstractThis work aims to develop a method for measurements of electric conductivity of doped silicon carbide in powder form. A general purpose measurement cell is used to produce an array of initial results and the experience and conclusions drawn from those are used to refine both the hardware and methodology. The main part of the refinements are focused on how force is applied to the powder and temperature control. The developed method is used to compare and evaluate produced batches of the material. The work concludes with a series of measurements that quantifies the repeatability of the final system together with ideas and suggestions for how the result could be improved.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/205866
dc.language.isoeng
dc.relation.ispartofseriesDiploma work - Department of Materials and Manufacturing Technology, Chalmers University of Technology : 137/2014
dc.setspec.uppsokTechnology
dc.subjectEnergi
dc.subjectElektroteknik
dc.subjectElektrofysik
dc.subjectEnergy
dc.subjectElectrical engineering
dc.subjectElectrophysics
dc.titleMethodology for measurements of electrical conductivity of doped silicon carbide
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
local.programmeElectric power engineering (MPEPO), MSc
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