Electrical Characterization of GaN:Si and AlGaN:Si
dc.contributor.author | Ye, Hong | |
dc.contributor.department | Chalmers tekniska högskola / Institutionen för mikroteknologi och nanovetenskap | sv |
dc.contributor.department | Chalmers University of Technology / Department of Microtechnology and Nanoscience | en |
dc.date.accessioned | 2019-07-03T12:46:19Z | |
dc.date.available | 2019-07-03T12:46:19Z | |
dc.date.issued | 2011 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12380/154356 | |
dc.language.iso | eng | |
dc.setspec.uppsok | PhysicsChemistryMaths | |
dc.subject | Materialvetenskap | |
dc.subject | Nanovetenskap och nanoteknik | |
dc.subject | Elektroteknik och elektronik | |
dc.subject | Materials Science | |
dc.subject | Nanoscience & Nanotechnology | |
dc.subject | Electrical Engineering, Electronic Engineering, Information Engineering | |
dc.title | Electrical Characterization of GaN:Si and AlGaN:Si | |
dc.type.degree | Examensarbete för masterexamen | sv |
dc.type.degree | Master Thesis | en |
dc.type.uppsok | H |
Ladda ner
Original bundle
1 - 1 av 1
Hämtar...
- Namn:
- 154356.pdf
- Storlek:
- 2.43 MB
- Format:
- Adobe Portable Document Format
- Beskrivning:
- Fulltext