NbN ultra-thin films for HEB-based THz systems

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dc.contributor.authorKrause, Sascha
dc.contributor.departmentChalmers tekniska högskola / Institutionen för rymd- och geovetenskapsv
dc.contributor.departmentChalmers University of Technology / Department of Earth and Space Sciencesen
dc.date.accessioned2019-07-03T13:20:16Z
dc.date.available2019-07-03T13:20:16Z
dc.date.issued2013
dc.description.abstractThe key technology for low-noise THz receivers operating above 1 THz, lies inevitably in the employment niobium nitride superconductors with critical bulk temperature of 16-17K. The enhancement of HEB’s limited IF bandwidth has been a relevant topic for two decades and is associated with the quality, hence critical temperature, Tc, of the 3.5-6nm thin NbN films. This thesis revisits the concept of employing buffer-layers which have not been utilized yet to deposit NbN onto. As a result, state-of-the-art 5.5nm thin NbN films have been successfully deposited exhibiting Tc as high as 13.2K and RRR-figure-of-merit close to unity. These films show considerable potential for highly-integrated THz electronics.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/188818
dc.language.isoeng
dc.setspec.uppsokLifeEarthScience
dc.subjectGrundläggande vetenskaper
dc.subjectAnnan naturvetenskap
dc.subjectAnnan teknik
dc.subjectBasic Sciences
dc.subjectOther Natural Sciences
dc.subjectOther Engineering and Technologies
dc.titleNbN ultra-thin films for HEB-based THz systems
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
local.programmeWireless, photonics and space engineering (MPWPS), MSc
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