The IGBT test set-up design

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dc.contributor.authorLiu, Kun
dc.contributor.authorHirsi, Abdirahman
dc.contributor.departmentChalmers tekniska högskola / Institutionen för energi och miljösv
dc.contributor.departmentChalmers University of Technology / Department of Energy and Environmenten
dc.date.accessioned2019-07-03T12:12:40Z
dc.date.available2019-07-03T12:12:40Z
dc.date.issued2008
dc.description.abstractAn experimental half bridge converter setup is designed in order to explore the switching characteristics and losses of a new type of IGBT module. A specific digital control circuit and a drive circuit for an IGBT are designed and integrated into one PCB which can provide different kinds of precise IGBT gate signals. The switching characteristics and losses are investigated under different parameters both in a hardware and a simulation. It can be observed that the switching losses are increasing with the increase of voltage and current levels. Increasing the gate resistance also tends to increase the IGBT switching losses, while the reverse recovery losses of the free-wheeling diode decrease. The switching characteristics of the IGBT are not affected by temperature, but the reverse recovery losses increase with the temperature. The stray inductance has a negative effect, since it causes the oscillation both in the voltage and current waveforms.
dc.identifier.urihttps://hdl.handle.net/20.500.12380/82855
dc.language.isoeng
dc.setspec.uppsokLifeEarthScience
dc.subjectElektroteknik
dc.subjectElektronik
dc.subjectElectrical engineering
dc.subjectElectronics
dc.titleThe IGBT test set-up design
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
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