NbN ultra-thin films for HEB-based THz systems

Examensarbete för masterexamen

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.12380/188818
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Type: Examensarbete för masterexamen
Master Thesis
Title: NbN ultra-thin films for HEB-based THz systems
Authors: Krause, Sascha
Abstract: The key technology for low-noise THz receivers operating above 1 THz, lies inevitably in the employment niobium nitride superconductors with critical bulk temperature of 16-17K. The enhancement of HEB’s limited IF bandwidth has been a relevant topic for two decades and is associated with the quality, hence critical temperature, Tc, of the 3.5-6nm thin NbN films. This thesis revisits the concept of employing buffer-layers which have not been utilized yet to deposit NbN onto. As a result, state-of-the-art 5.5nm thin NbN films have been successfully deposited exhibiting Tc as high as 13.2K and RRR-figure-of-merit close to unity. These films show considerable potential for highly-integrated THz electronics.
Keywords: Grundläggande vetenskaper;Annan naturvetenskap;Annan teknik;Basic Sciences;Other Natural Sciences;Other Engineering and Technologies
Issue Date: 2013
Publisher: Chalmers tekniska högskola / Institutionen för rymd- och geovetenskap
Chalmers University of Technology / Department of Earth and Space Sciences
URI: https://hdl.handle.net/20.500.12380/188818
Collection:Examensarbeten för masterexamen // Master Theses



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