Design of drive stage of a Mosfet SiC converter

Examensarbete för masterexamen

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dc.contributor.authorGuinard, Orianne
dc.contributor.departmentChalmers tekniska högskola / Institutionen för energi och miljösv
dc.contributor.departmentChalmers University of Technology / Department of Energy and Environmenten
dc.date.accessioned2019-07-03T13:35:31Z-
dc.date.available2019-07-03T13:35:31Z-
dc.date.issued2014
dc.identifier.urihttps://hdl.handle.net/20.500.12380/211346-
dc.description.abstractThis thesis is about studying the gate driving of a Mosfet. One step was to build a new circuit board for this investigation using the software Target. First experiments were made that aim to test the driving circuit using an R,C load instead of a Mosfet. When comparing with the simulation, it appears that the gate driver operates as quick and normal as expected when it is used with an R,C load unless R and C are very small (smaller than what it would be using a Mosfet). However, when it is connected to a Mosfet and an R,L load, it doesn't react as fast as expected with the increasing drain-source voltage. Finally, the last part but not the least of this project consists of investigating the switching losses in a Mosfet and an SiC Mosfet. The result are not conclusive so far since the current measurement is biased.
dc.language.isoeng
dc.setspec.uppsokLifeEarthScience
dc.subjectEnergi
dc.subjectElkraftteknik
dc.subjectEnergy
dc.subjectElectric power engineering
dc.titleDesign of drive stage of a Mosfet SiC converter
dc.type.degreeExamensarbete för masterexamensv
dc.type.degreeMaster Thesisen
dc.type.uppsokH
Collection:Examensarbeten för masterexamen // Master Theses



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